2SA1952 transistors high-speed switching transistor ( ? 60v, ? 5a) 2SA1952 z features 1) high speed switching. (tf : typ. 0.15 s at i c = ? 3a) 2) low v ce(sat) . (typ. ? 0.2v at i c /i b = ? 3/ ? 0.15a) 3) wide soa. (safe operating area) 4) complements the 2sc5103. z absolute maximum ratings (ta = 25 c) parameter symbol v cbo v ceo v ebo i c p c tj tstg limits ? 100 ? 60 ? 5 ? 5 150 ? 55~ + 150 unit v v v a ? 10 1 10 a(pulse) w w(tc = 25 c) c c collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation z packaging specifications and h fe type 2SA1952 cpt3 q 2500 tl package h fe code basic ordering unit (pieces) z z z z external dimensions (units : mm) 2SA1952 (3) emitter(source) (2) collector(drain) (1) base(gate) rohm : cpt3 eiaj : sc-63 2.3 0.5 1.0 0.5 9.5 2.5 0.8min. 1.5 6.5 2.3 ( 2 ) ( 3 ) c0.5 0.65 0.9 ( 1 ) 0.75 2.3 0.9 1.5 5.5 5.1 z electrical characteristics (ta = 25 c) min. typ. max. unit conditions bv ebo i cbo i ebo v ce(sat) f t cob ? 5 ? ? ? 120 ? ? ? ? ? ? ? ? 80 130 ? ? ? 10 ? 10 ? 0.3 270 ? ? v v a a v ? mhz pf i c = ? 50 a bv ceo ? 60 ? ? vi c = ? 1ma i e = ? 50 a v cb = ? 100v v eb = ? 5v i c /i b = ? 3a/ ? 0.15a ?? ? 0.5 vi c /i b = ? 4a/ ? 0.2a v be(sat) ?? ? 1.5 vi c /i b = ? 4a/ ? 0.2a ?? ? 1.2 vi c /i b = ? 3a/ ? 0.15a h fe v ce = ? 2v , i c = ? 1a v ce = ? 10v , i e = 0.5a , f = 30mhz v cb = ? 10v , i e = 0a , f = 1mhz ton ?? 0.3 si c = ? 3a , r l = 10 ? tstg ?? 1.5 si b1 = ? i b2 = ? 0.15a tf ?? 0.3 sv cc ? 30v collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage dc current transfer ratio transition frequency output capacitance turn-on time storage time fall time collector-base breakdown voltage parameter bv cbo symbol ? 100
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